Toshiba Electronics (UK) Ltd 20V 0.8A MOSFET Transistor SSM6N62TU,LF

MOSFET 2N-CH 20V 0.8A UF6 Product overview: SSM6N62TU,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.8A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SSM6N62TU,LF can be used for catalog matching and distributor lookup.

Mosfet Array 2 N-Channel (Dual) 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6

Mosfet Array 2 N-Channel (Dual) 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6

Mosfet Array 2 N-Channel (Dual) 20V 800mA (Ta) 500mW (Ta) Surface Mount UF6

Win Source Part Number: 1096306-SSM6N62TU,LF
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Power - Max: 500mW (Ta)
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: UF6
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 177pF @ 10V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: SSM6N62TULFCT,SSM6N62TULFTR,SSM6N62TULFDKR,SSM6N62TU,LF(B
Base Product Number: SSM6N62