Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6N16FU SSM6N16FU

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 193152-SSM6N16FU
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: US6
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100mA
Gate-Source Threshold Voltage: 1.1V @ 100μA
Max Input Capacitance: 9.3pF @ 3V
Maximum Rds On at Id,Vgs: 3 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET 2N-CH 20V 0.1A US6 Product overview: SSM6N16FU from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 0.1A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM6N16FU can be used for catalog matching and distributor lookup.