Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 193152-SSM6N16FU
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: US6
Maximum Power Dissipation: 200mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 100mA
Gate-Source Threshold Voltage: 1.1V @ 100μA
Max Input Capacitance: 9.3pF @ 3V
Maximum Rds On at Id,Vgs: 3 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 193152-SSM6N16FU |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6N16FU |
| Polarity | N-Channel |
| V(BR)DSS | 20 volts |
| PD | 200 milliwatts |
