The SSM6N09FU is a dual N-channel MOSFET in a small surface-mount package designed for high-speed switching applications. It features a maximum drain-source voltage of 30 V and a continuous drain current rating of 400 mA. The drain-source ON resistance is 0.7 Ω max at VGS = 10 V and 1.2 Ω max at VGS = 4 V. The device has a power dissipation rating of 300 mW at Ta = 25°C and operates with a channel temperature up to 150 °C. The package dimensions are 2.0 mm × 1.2 mm × 0.75 mm, based on standard packaging for this series. Gate threshold voltage ranges from 1.1 V to 1.8 V, and input capacitance is 20 pF at VDS = 5 V and f = 1 MHz. Switching times are 72 ns turn-on and 68 ns turn-off under specified conditions. The part is not intended for use in safety-critical applications.
Trans MOSFET N-CH Si 30V 0.4A 6-Pin US T/R Product overview: SSM6N09FU(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM6N09FU(TE85L,
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SSM6N09FU(TE85L,F) |
| Product Name | 30V 0.4A MOSFET Transistor |
| MOSFET Operating Mode | Enhancement |
| V(BR)DSS | 30 volts |
| PD | 300 milliwatts |
