Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM6J207FE SSM6J207FE

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 193073-SSM6J207FE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: ES6 (1.6x1.6)
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.4A (Ta)
Gate-Source Threshold Voltage: 2.6V @ 1mA
Max Input Capacitance: 137pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 251 mOhm @ 650mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

MOSFET P-CH 30V 1.4A ES6 Product overview: SSM6J207FE from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 1.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 1.4A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM6J207FE can be used for catalog matching and distributor lookup.