Toshiba Corporation MOSFET SSM6J205FE

Description
MOSFET Vds=-20V Id=-800mA 6Pin
Description
MOSFET Vds=-20V Id=-800mA 6Pin
Datasheet
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The SSM6J205FE is a silicon P-channel MOSFET in a 6-pin surface-mount package designed for high-speed switching and power management applications. It has a drain-source voltage rating of -20 V and a continuous drain current of -0.8 A. The device features low ON-resistance of 460 mΩ maximum at VGS = -1.8 V, 306 mΩ at VGS = -2.5 V, and 234 mΩ at VGS = -4.0 V. Its gate-source voltage is rated at ±8 V, and it operates with a maximum channel temperature of 150 °C. The package weight is 3 mg (typical), and it is mounted on an FR4 board for thermal performance. The part is rated for storage temperatures from -55 °C to 150 °C.

Datasheet Summary
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The SSM6J205FE is a silicon P-channel MOSFET in a 6-pin surface-mount package designed for high-speed switching and power management applications. It has a drain-source voltage rating of -20 V and a continuous drain current of -0.8 A. The device features low ON-resistance of 460 mΩ maximum at VGS = -1.8 V, 306 mΩ at VGS = -2.5 V, and 234 mΩ at VGS = -4.0 V. Its gate-source voltage is rated at ±8 V, and it operates with a maximum channel temperature of 150 °C. The package weight is 3 mg (typical), and it is mounted on an FR4 board for thermal performance. The part is rated for storage temperatures from -55 °C to 150 °C.

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Sheung Wan, Hong Kong
MOSFET Vds=-20V Id=-800mA 6Pin

MOSFET Vds=-20V Id=-800mA 6Pin

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SSM6J205FE
Product Name MOSFET
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