Toshiba Electronics (UK) Ltd Single FETs, MOSFETs SSM3K123TU,LF

N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM

N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM

N-Channel 20V 4.2A (Ta) 500mW (Ta) Surface Mount UFM

MOSFET N-CH 20V 4.2A UFM Product overview: SSM3K123TU,LF from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM3K123TU,LF can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 101020-SSM3K123TU,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: UFM
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.2A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 13.6nC @ 4V
Max Input Capacitance: 1010pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 28 mOhm @ 3A, 4V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient