Toshiba Imaging Systems Division TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3K116TU SSM3K116TU

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 192945-SSM3K116TU
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: UFM
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.2A (Ta)
Gate-Source Threshold Voltage: 1.1V @ 100μA
Max Input Capacitance: 245pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 100 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 30V 2.2A UFM Product overview: SSM3K116TU from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 2.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 2.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM3K116TU can be used for catalog matching and distributor lookup.

Transistor,FET,Nch,30V/2.2A,UFM