Toshiba Semiconductor & Storage Products SSM3K104TU,LF(B

Description
SSM3K104TU - Small-signal MOSFET
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Description
SSM3K104TU - Small-signal MOSFET
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Datasheet
Datasheet Summary
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SSM3K104TU is an N-channel MOSFET designed for power management and high-speed switching applications. It is packaged in a UFM package measuring 2.1 mm × 1.7 mm with a height of 1.0 mm and weighs 6.6 mg. It has a drain-source voltage rating of 20 V and a gate-source voltage rating of ±12 V, with a maximum drain current of 3.0 A. On-resistance is specified as 110 mΩ maximum at VGS = 1.8 V, 74 mΩ at VGS = 2.5 V, and 56 mΩ at VGS = 4.0 V. Channel temperature is rated to 150°C. The device meets JESD standards and is intended for use under conditions described in Toshiba's reliability guidelines. It is not warranted for unintended uses such as medical, automotive, or aerospace systems.

Datasheet Summary
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SSM3K104TU is an N-channel MOSFET designed for power management and high-speed switching applications. It is packaged in a UFM package measuring 2.1 mm × 1.7 mm with a height of 1.0 mm and weighs 6.6 mg. It has a drain-source voltage rating of 20 V and a gate-source voltage rating of ±12 V, with a maximum drain current of 3.0 A. On-resistance is specified as 110 mΩ maximum at VGS = 1.8 V, 74 mΩ at VGS = 2.5 V, and 56 mΩ at VGS = 4.0 V. Channel temperature is rated to 150°C. The device meets JESD standards and is intended for use under conditions described in Toshiba's reliability guidelines. It is not warranted for unintended uses such as medical, automotive, or aerospace systems.

Suppliers

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Product
Description
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 - SSM3K104TU,LF(B - Rochester Electronics
Newburyport, MA, United States
SSM3K104TU - Small-signal MOSFET

SSM3K104TU - Small-signal MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category RF MOSFET Transistors
Product Number SSM3K104TU,LF(B
Package Type UFM
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