Toshiba Electronics (UK) Ltd Single FETs, MOSFETs SSM3J66MFV,L3F

P-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM

P-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM

P-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM

Win Source Part Number: 1277947-SSM3J66MFV,L3F
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: U-MOSVI
Package: Tape & Reel
Standard Package: 8,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 150mW (Ta)
Package / Case: SOT-723
Supplier Device Package: VESM
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Vgs (Max): +6V, -8V
Temperature Range - Operating: 150°C
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: SSM3J66MFVL3FDKR,SSM3J66MFV,L3F(B,SSM3J66MFVL3FTR,SSM3J66MFVL3FCT
Base Product Number: SSM3J66
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
RoHS Status: RoHS non-compliant