Toshiba Electronics (UK) Ltd Single FETs, MOSFETs SSM3J35CTC,L3F

P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C

P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C

P-Channel 20V 250mA (Ta) 500mW (Ta) Surface Mount CST3C

MOSFET P-CH 20V 250MA CST3C Product overview: SSM3J35CTC,L3F from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 250MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 250MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SSM3J35CTC,L3F can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 105766-SSM3J35CTC,L3F
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: CST3C
Dimension: SC-101, SOT-883
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 250mA (Ta)
Gate-Source Threshold Voltage: 1V @ 100μA
Max Input Capacitance: 42pF @ 10V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 150mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance