Toshiba America Electronic Components, Inc. Discrete Semiconductor Products SSM3J331R,LF

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 109276-SSM3J331R,LF Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: 150°C (TJ) Package: SOT-23-3 Flat Leads Manufacturer Device Package: SOT-23F FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) @ Vds: 630pF @ 10V Power - Max: 1W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 109276-SSM3J331R,LF Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: 150°C (TJ) Package: SOT-23-3 Flat Leads Manufacturer Device Package: SOT-23F FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) @ Vds: 630pF @ 10V Power - Max: 1W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Discrete Semiconductor Products - 109276-SSM3J331R,LF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
109276-SSM3J331R,LF
Discrete Semiconductor Products 109276-SSM3J331R,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 109276-SSM3J331R,LF Category: Discrete Semiconductor Products Family: Transistors - FETs, MOSFETs - Single Packaging: Reel(TR) Mounting Style: SMD/SMT Operating Temperature Range: 150°C (TJ) Package: SOT-23-3 Flat Leads Manufacturer Device Package: SOT-23F FET Type: MOSFET P-Channel, Metal Oxide FET Feature: Logic Level Gate, 1.5V Drive Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 10.4nC @ 4.5V Input Capacitance (Ciss) @ Vds: 630pF @ 10V Power - Max: 1W Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 109276-SSM3J331R,LF
Category: Discrete Semiconductor Products
Family: Transistors - FETs, MOSFETs - Single
Packaging: Reel(TR)
Mounting Style: SMD/SMT
Operating Temperature Range: 150°C (TJ)
Package: SOT-23-3 Flat Leads
Manufacturer Device Package: SOT-23F
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Logic Level Gate, 1.5V Drive
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 1mA
Gate Charge (Qg) @ Vgs: 10.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 630pF @ 10V
Power - Max: 1W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 109276-SSM3J331R,LF
Product Name Discrete Semiconductor Products
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