Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3J15FV SSM3J15FV

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 192891-SSM3J15FV
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: VESM
Dimension: SOT-723
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 100mA (Ta)
Gate-Source Threshold Voltage: 1.7V @ 100μA
Max Input Capacitance: 9.1pF @ 3V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 Ohm @ 10mA, 4V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 30V 0.1A VESM Product overview: SSM3J15FV from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.1A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM3J15FV can be used for catalog matching and distributor lookup.