Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SSM3J129TU SSM3J129TU

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 192871-SSM3J129TU
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 500mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: UFM
Dimension: 3-SMD, Flat Leads
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4.6A (Ta)
Gate-Source Threshold Voltage: 1V @ 1mA
Max Gate Charge: 8.1nC @ 4.5V
Max Input Capacitance: 640pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 46 mOhm @ 3A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Sufficient

MOSFET P-CH 20V 4.6A UFM Product overview: SSM3J129TU from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SSM3J129TU can be used for catalog matching and distributor lookup.