Toshiba America Electronic Components, Inc. TRANSISTORS - RF Transistors (BJT) - RN4987T5LFT RN4987T5LFT

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 978203-RN4987T5LFT
Packaging: Digi-Reel®
Polarity: NPN, PNP
Number of Pins: 6
Categories: RF Transistors(BJT)
Popularity: Low
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Element Configuration: Dual
Max Power Dissipation: 200 mW
Max Breakdown Voltage: 50 V
Collector Emitter Breakdown Voltage: 50 V
Collector Emitter Voltage (VCEO): 50 V
Max Collector Current: 100 mA
Transition Frequency: 200 MHz

Trans Digital BJT NPN/PNP 50V 100mA 6-Pin US T/R Product overview: RN4987T5LFT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-RN4987T5LFT can be used for catalog matching and distributor lookup.