Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4987FE,LF RN4987FE,LF

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096663-RN4987FE,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz, 200MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient