Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4983FE,LF(CB RN4983FE,LF(CB

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092523-RN4983FE,LF( CB Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092523-RN4983FE,LF( CB Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4983FE,LF(CB - 1092523-RN4983FE,LF(CB - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4983FE,LF(CB
1092523-RN4983FE,LF(CB
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4983FE,LF(CB 1092523-RN4983FE,LF(CB
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092523-RN4983FE,LF( CB Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 70 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092523-RN4983FE,LF(CB
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: ES6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 70 @ 10mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet

Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 1092523-RN4983FE,LF(CB
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4983FE,LF(CB
Unlock Full Specs
to access all available technical data

Similar Products

Translator ICs - 1899033 - RS Components, Ltd.
RS Components, Ltd.
Specs
Logic Family LVCMOS/LVTTL
Package Type SSOP; TSSOP; TSSOP
Output Type 3-State; 3 State
View Details
Translators, Level Shifters - 74AUP1T58GF,132-NEX - Quarktwin Technology Ltd.
Specs
Package Type 6-XFDFN
Output Type Single-Ended
Features RoHS
View Details