Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4982FE RN4982FE

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183838-RN4982FE Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183838-RN4982FE Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4982FE - 183838-RN4982FE - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4982FE
183838-RN4982FE
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4982FE 183838-RN4982FE
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183838-RN4982FE Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: ES6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 183838-RN4982FE
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: ES6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 50 @ 10mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 183838-RN4982FE
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4982FE
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