Toshiba Electronics (UK) Ltd Bipolar Transistor Arrays, Pre-Biased RN4982FE,LF(CT

Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
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Description
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Request a Quote Datasheet

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Bipolar Transistor Arrays, Pre-Biased - RN4982FELF(CTDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN4982FELF(CTDKR-ND
Bipolar Transistor Arrays, Pre-Biased RN4982FELF(CTDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN4982FELF(CTCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN4982FELF(CTCT-ND
Bipolar Transistor Arrays, Pre-Biased RN4982FELF(CTCT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

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Bipolar Transistor Arrays, Pre-Biased - RN4982FELF(CTTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN4982FELF(CTTR-ND
Bipolar Transistor Arrays, Pre-Biased RN4982FELF(CTTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 963925-RN4982FE,LF(CT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
963925-RN4982FE,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 963925-RN4982FE,LF(CT
Win Source Part Number: 963925-RN4982FE,LF(C T Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Power - Max: 100mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 250MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 Alternative Parts (Cross-Reference): RN4902FE,LF(CT; RN1962FE(TE85L,F); NSBA114EDXV6T5; NSBC114EPDXV6T1; NSBA124EDXV6T1; MMDT3906VC-7; ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN4982FE(T5LFT)CT,RN 4982FELF(CBDKR,RN498 2FELF(CBDKR-ND,RN498 2FELF(CTDKR,RN4982FE LF(CBCT,RN4982FELF(C BCT-ND,RN4982FELF(CT TR,RN4982FE,LF(CB,RN 4982FE(T5LFT)TR,RN49 82FE(T5LFT)DKR-ND,RN 4982FE(T5L,F,T),RN49 82FELF(CBTR-ND,RN498 2FE(T5LFT)DKR,RN4982 FELF(CTCT,RN4982FELF (CBTR,RN4982FE(T5LFT )TR-ND,RN4982FE(T5LF T)CT-ND Base Product Number: RN4982

Win Source Part Number: 963925-RN4982FE,LF(CT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Power - Max: 100mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
Alternative Parts (Cross-Reference): RN4902FE,LF(CT; RN1962FE(TE85L,F); NSBA114EDXV6T5; NSBC114EPDXV6T1; NSBA124EDXV6T1; MMDT3906VC-7;
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN4982FE(T5LFT)CT,RN4982FELF(CBDKR,RN4982FELF(CBDKR-ND,RN4982FELF(CTDKR,RN4982FELF(CBCT,RN4982FELF(CBCT-ND,RN4982FELF(CTTR,RN4982FE,LF(CB,RN4982FE(T5LFT)TR,RN4982FE(T5LFT)DKR-ND,RN4982FE(T5L,F,T),RN4982FELF(CBTR-ND,RN4982FE(T5LFT)DKR,RN4982FELF(CTCT,RN4982FELF(CBTR,RN4982FE(T5LFT)TR-ND,RN4982FE(T5LFT)CT-ND
Base Product Number: RN4982

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Singapore, Singapore
0.1W Bipolar Transistor
293-RN4982FE,LF(CT
0.1W Bipolar Transistor 293-RN4982FE,LF(CT
TRANS NPN/PNP PREBIAS 0.1W ES6 Product overview: RN4982FE,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN4982FE,LF(CT can be used for catalog matching and distributor lookup.

TRANS NPN/PNP PREBIAS 0.1W ES6 Product overview: RN4982FE,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN4982FE,LF(CT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN4982FE,LF(CT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN4982FE,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN4982FE,LF(CT
TRANS NPN/PNP PREBIAS 0.1W ES6

TRANS NPN/PNP PREBIAS 0.1W ES6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number RN4982FELF(CTDKR-ND 963925-RN4982FE,LF(CT 293-RN4982FE,LF(CT RN4982FE,LF(CT
Product Name Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 0.1W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP NPN; PNP
Package Type SOT-563, SOT-666 SOT3 Tape & Reel (TR)
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 50 dB
Operating Frequency 250 MHz
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