Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4910,LF RN4910,LF

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 110815-RN4910,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 110815-RN4910,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4910,LF - 110815-RN4910,LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4910,LF
110815-RN4910,LF
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4910,LF 110815-RN4910,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 110815-RN4910,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 110815-RN4910,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: 1 NPN, 1 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: US6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Logic Level Translators
Product Number 110815-RN4910,LF
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN4910,LF
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