Toshiba Electronics (UK) Ltd Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN4905FE,LF(CT

Description
Win Source Part Number: 1178366-RN4905FE,LF( CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Power - Max: 100mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN4905FE(TE85LF)TR-N D,RN4905FELF(CBTR-ND ,RN4905FE(TE85LF)CT- ND,RN4905FELF(CBTR,R N4905FE,LF(CB,RN4905 FELF(CBDKR-ND,RN4905 FE(TE85L,F),RN4905FE (TE85LF)CT,RN4905FEL F(CTCT,RN4905FELF(CT DKR,RN4905FE(TE85LF) DKR-ND,RN4905FELF(CB DKR,RN4905FELF(CBCT, RN4905FELF(CBCT-ND,R N4905FE(TE85LF)DKR,R N4905FELF(CTTR,RN490 5FE(TE85LF)TR Base Product Number: RN4905
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Description
Win Source Part Number: 1178366-RN4905FE,LF( CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Power - Max: 100mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN4905FE(TE85LF)TR-N D,RN4905FELF(CBTR-ND ,RN4905FE(TE85LF)CT- ND,RN4905FELF(CBTR,R N4905FE,LF(CB,RN4905 FELF(CBDKR-ND,RN4905 FE(TE85L,F),RN4905FE (TE85LF)CT,RN4905FEL F(CTCT,RN4905FELF(CT DKR,RN4905FE(TE85LF) DKR-ND,RN4905FELF(CB DKR,RN4905FELF(CBCT, RN4905FELF(CBCT-ND,R N4905FE(TE85LF)DKR,R N4905FELF(CTTR,RN490 5FE(TE85LF)TR Base Product Number: RN4905
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1178366-RN4905FE,LF(CT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1178366-RN4905FE,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1178366-RN4905FE,LF(CT
Win Source Part Number: 1178366-RN4905FE,LF( CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 4,000 Mounting: SMD (SMT) Power - Max: 100mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN4905FE(TE85LF)TR-N D,RN4905FELF(CBTR-ND ,RN4905FE(TE85LF)CT- ND,RN4905FELF(CBTR,R N4905FE,LF(CB,RN4905 FELF(CBDKR-ND,RN4905 FE(TE85L,F),RN4905FE (TE85LF)CT,RN4905FEL F(CTCT,RN4905FELF(CT DKR,RN4905FE(TE85LF) DKR-ND,RN4905FELF(CB DKR,RN4905FELF(CBCT, RN4905FELF(CBCT-ND,R N4905FE(TE85LF)DKR,R N4905FELF(CTTR,RN490 5FE(TE85LF)TR Base Product Number: RN4905

Win Source Part Number: 1178366-RN4905FE,LF(CT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Power - Max: 100mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN4905FE(TE85LF)TR-ND,RN4905FELF(CBTR-ND,RN4905FE(TE85LF)CT-ND,RN4905FELF(CBTR,RN4905FE,LF(CB,RN4905FELF(CBDKR-ND,RN4905FE(TE85L,F),RN4905FE(TE85LF)CT,RN4905FELF(CTCT,RN4905FELF(CTDKR,RN4905FE(TE85LF)DKR-ND,RN4905FELF(CBDKR,RN4905FELF(CBCT,RN4905FELF(CBCT-ND,RN4905FE(TE85LF)DKR,RN4905FELF(CTTR,RN4905FE(TE85LF)TR
Base Product Number: RN4905

Buy Now Datasheet
Singapore, Singapore
0.1W Bipolar Transistor
293-RN4905FE,LF(CT
0.1W Bipolar Transistor 293-RN4905FE,LF(CT
TRANS NPN/PNP PREBIAS 0.1W ES6 Product overview: RN4905FE,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN4905FE,LF(CT can be used for catalog matching and distributor lookup.

TRANS NPN/PNP PREBIAS 0.1W ES6 Product overview: RN4905FE,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN4905FE,LF(CT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN4905FELF(CTDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN4905FELF(CTDKR-ND
Bipolar Transistor Arrays, Pre-Biased RN4905FELF(CTDKR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN4905FELF(CTCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN4905FELF(CTCT-ND
Bipolar Transistor Arrays, Pre-Biased RN4905FELF(CTCT-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN4905FELF(CTTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN4905FELF(CTTR-ND
Bipolar Transistor Arrays, Pre-Biased RN4905FELF(CTTR-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN4905FE,LF(CT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN4905FE,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN4905FE,LF(CT
TRANS NPN/PNP PREBIAS 0.1W ES6

TRANS NPN/PNP PREBIAS 0.1W ES6

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1178366-RN4905FE,LF(CT 293-RN4905FE,LF(CT RN4905FELF(CTDKR-ND RN4905FE,LF(CT
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 0.1W Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; PNP NPN; PNP NPN; PNP
Package Type SOT3 Tape & Reel (TR) SOT-563, SOT-666 ES6
IC(max) 100 milliamps 100 milliamps 100 milliamps
Power Gain 80 dB
Operating Frequency 200 MHz
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