Toshiba Electronics (UK) Ltd 0.2W Bipolar Transistor RN2911,LF

Description
TRANS 2PNP PREBIAS 0.2W US6 Product overview: RN2911,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2911,LF can be used for catalog matching and distributor lookup.
Request a Quote Datasheet
Description
TRANS 2PNP PREBIAS 0.2W US6 Product overview: RN2911,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2911,LF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
0.2W Bipolar Transistor
293-RN2911,LF
0.2W Bipolar Transistor 293-RN2911,LF
TRANS 2PNP PREBIAS 0.2W US6 Product overview: RN2911,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2911,LF can be used for catalog matching and distributor lookup.

TRANS 2PNP PREBIAS 0.2W US6 Product overview: RN2911,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2911,LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN2911,LF - 109242-RN2911,LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN2911,LF
109242-RN2911,LF
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN2911,LF 109242-RN2911,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 109242-RN2911,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: 2 PNP - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 109242-RN2911,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: US6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN2911LFTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN2911LFTR-ND
Bipolar Transistor Arrays, Pre-Biased RN2911LFTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN2911LFCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN2911LFCT-ND
Bipolar Transistor Arrays, Pre-Biased RN2911LFCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN2911LFDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN2911LFDKR-ND
Bipolar Transistor Arrays, Pre-Biased RN2911LFDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2911,LF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN2911,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN2911,LF
TRANS 2PNP PREBIAS 0.2W US6

TRANS 2PNP PREBIAS 0.2W US6

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number 293-RN2911,LF 109242-RN2911,LF RN2911LFTR-ND RN2911,LF
Product Name 0.2W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN2911,LF Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; 2 PNP - Pre-Biased (Dual) PNP
Package Type Tape & Reel (TR) SOT3; US6 6-TSSOP, SC-88, SOT-363 US6
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100000 milliamps 100 milliamps
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