Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN2910FE,LF(CB RN2910FE,LF(CB

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092504-RN2910FE,LF(CB
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: ES6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

TRANS 2PNP PREBIAS 0.1W ES6 Product overview: RN2910FE,LF(CB from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2910FE,LF(CB can be used for catalog matching and distributor lookup.