The RN2906FE,LF(CT) is a pre-biased bipolar junction transistor (BJT) array designed for various applications including switching, inverter circuits, interfacing, and driver circuits. It features a dual PNP configuration with integrated bias resistors, which simplifies circuit design by reducing the number of external components needed. This product is AEC-Q101 qualified, making it suitable for automotive applications. The maximum collector-emitter voltage is rated at 50V, with a maximum collector current of 100mA and a power dissipation of 100mW. The transistor exhibits a DC current gain (hFE) of at least 80 at 10mA and 5V, and a maximum Vce saturation of 300mV at specified conditions. The device operates effectively at frequencies up to 200MHz. The RN2906FE,LF(CT) is packaged in a compact SOT-563 or SOT-666 case, with a standard packaging of 4,000 units on tape and reel. It is important to note that this product is RoHS non-compliant.
Win Source Part Number: 974587-RN2906FE,LF(C
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Power - Max: 100mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Other Names: RN2906FELF(CTTR,RN29
Base Product Number: RN2906
RoHS Status: RoHS non-compliant
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
PNPX2 BRT Q1BSR4.7KOHM Q1BER47KO
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 974587-RN2906FE,LF(CT | RN2906FELF(CTTR-ND | RN2906FE,LF(CT |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP | |
| Package Type | SOT3 | SOT-563, SOT-666 | |
| IC(max) | 100 milliamps | 100 milliamps | |
| Power Gain | 80 dB |
