Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092502-RN2906,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: 2 PNP - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: US6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
TRANS 2PNP PREBIAS 0.2W US6
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 1092502-RN2906,LF | RN2906LFCT-ND | RN2906,LF |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN2906,LF | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP; 2 PNP - Pre-Biased (Dual) | PNP |
