Toshiba Electronics (UK) Ltd Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN2905,LF(CT

Description
Win Source Part Number: 1160110-RN2905,LF(CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 Alternative Parts (Cross-Reference): RN2905LF(CT; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN2905T5LFTTR,RN2905 T5LFTTR-ND,RN2905LF( CTTR-ND,RN2905T5LFTD KR-ND,RN2905T5LFT,RN 2905LF(CTCT,RN2905T5 LFTDKR,RN2905LF(CT,R N2905(T5L,F,T),RN290 5 (T5L,F,T),RN2905T5LF TCT,RN2905LF(CTDKR Base Product Number: RN2905
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Description
Win Source Part Number: 1160110-RN2905,LF(CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 Alternative Parts (Cross-Reference): RN2905LF(CT; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN2905T5LFTTR,RN2905 T5LFTTR-ND,RN2905LF( CTTR-ND,RN2905T5LFTD KR-ND,RN2905T5LFT,RN 2905LF(CTCT,RN2905T5 LFTDKR,RN2905LF(CT,R N2905(T5L,F,T),RN290 5 (T5L,F,T),RN2905T5LF TCT,RN2905LF(CTDKR Base Product Number: RN2905
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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased - 1160110-RN2905,LF(CT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased
1160110-RN2905,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased 1160110-RN2905,LF(CT
Win Source Part Number: 1160110-RN2905,LF(CT Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Transistor Type: 2 PNP - Pre-Biased (Dual) Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 200MHz Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6 Alternative Parts (Cross-Reference): RN2905LF(CT; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) Resistor - Base (R1): 2.2kOhms Resistor - Emitter Base (R2): 47kOhms HTSUS: 8541.21.0095 Mfr: Toshiba Semiconductor and Storage Other Names: RN2905T5LFTTR,RN2905 T5LFTTR-ND,RN2905LF( CTTR-ND,RN2905T5LFTD KR-ND,RN2905T5LFT,RN 2905LF(CTCT,RN2905T5 LFTDKR,RN2905LF(CT,R N2905(T5L,F,T),RN290 5 (T5L,F,T),RN2905T5LF TCT,RN2905LF(CTDKR Base Product Number: RN2905

Win Source Part Number: 1160110-RN2905,LF(CT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Alternative Parts (Cross-Reference): RN2905LF(CT;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN2905T5LFTTR,RN2905T5LFTTR-ND,RN2905LF(CTTR-ND,RN2905T5LFTDKR-ND,RN2905T5LFT,RN2905LF(CTCT,RN2905T5LFTDKR,RN2905LF(CT,RN2905(T5L,F,T),RN2905 (T5L,F,T),RN2905T5LFTCT,RN2905LF(CTDKR
Base Product Number: RN2905

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 264-RN2905,LF(CT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
264-RN2905,LF(CT-ND
Bipolar Transistor Arrays, Pre-Biased 264-RN2905,LF(CT-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 264-RN2905,LF(CTDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
264-RN2905,LF(CTDKR-ND
Bipolar Transistor Arrays, Pre-Biased 264-RN2905,LF(CTDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - 264-RN2905,LF(CTTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
264-RN2905,LF(CTTR-ND
Bipolar Transistor Arrays, Pre-Biased 264-RN2905,LF(CTTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2905,LF(CT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN2905,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN2905,LF(CT
TRANS 2PNP PREBIAS 0.2W US6

TRANS 2PNP PREBIAS 0.2W US6

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1160110-RN2905,LF(CT 264-RN2905,LF(CT-ND RN2905,LF(CT
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type SOT3 6-TSSOP, SC-88, SOT-363
IC(max) 100 milliamps 100 milliamps
Power Gain 80 dB
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