Toshiba Electronics (UK) Ltd Bipolar Transistor Arrays, Pre-Biased RN2905,LF(CT

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6

Win Source Part Number: 1160110-RN2905,LF(CT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 200MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Alternative Parts (Cross-Reference): RN2905LF(CT;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN2905T5LFTTR,RN2905T5LFTTR-ND,RN2905LF(CTTR-ND,RN2905T5LFTDKR-ND,RN2905T5LFT,RN2905LF(CTCT,RN2905T5LFTDKR,RN2905LF(CT,RN2905(T5L,F,T),RN2905 (T5L,F,T),RN2905T5LFTCT,RN2905LF(CTDKR
Base Product Number: RN2905