Toshiba Electronics (UK) Ltd Single, Pre-Biased Bipolar Transistors RN2422TE85LF

TRANS PREBIAS PNP 50V 0.8A SMINI

TRANS PREBIAS PNP 50V 0.8A SMINI

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 800mA 200MHz 200mW Surface Mount S-Mini

TRANS PREBIAS PNP 50V 0.8A SMINI Product overview: RN2422TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.8A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2422TE85LF can be used for catalog matching and distributor lookup.

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092497-RN2422TE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: S-Mini
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 65 @ 100mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance