Toshiba Electronics (UK) Ltd 50V 0.8A Bipolar Transistor RN2422TE85LF

Description
TRANS PREBIAS PNP 50V 0.8A SMINI Product overview: RN2422TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.8A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2422TE85LF can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 50V 0.8A SMINI Product overview: RN2422TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.8A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2422TE85LF can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
50V 0.8A Bipolar Transistor
292-RN2422TE85LF
50V 0.8A Bipolar Transistor 292-RN2422TE85LF
TRANS PREBIAS PNP 50V 0.8A SMINI Product overview: RN2422TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.8A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2422TE85LF can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 50V 0.8A SMINI Product overview: RN2422TE85LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.8A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.8A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2422TE85LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2422TE85LFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2422TE85LFDKR-ND
Single, Pre-Biased Bipolar Transistors 264-RN2422TE85LFDKR-ND
TRANS PREBIAS PNP 50V 0.8A SMINI

TRANS PREBIAS PNP 50V 0.8A SMINI

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Single, Pre-Biased Bipolar Transistors - 264-RN2422TE85LFCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2422TE85LFCT-ND
Single, Pre-Biased Bipolar Transistors 264-RN2422TE85LFCT-ND
TRANS PREBIAS PNP 50V 0.8A SMINI

TRANS PREBIAS PNP 50V 0.8A SMINI

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Single, Pre-Biased Bipolar Transistors - 264-RN2422TE85LFTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2422TE85LFTR-ND
Single, Pre-Biased Bipolar Transistors 264-RN2422TE85LFTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 800mA 200MHz 200mW Surface Mount S-Mini

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 800mA 200MHz 200mW Surface Mount S-Mini

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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2422TE85LF - 1092497-RN2422TE85LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2422TE85LF
1092497-RN2422TE85LF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2422TE85LF 1092497-RN2422TE85LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092497-RN2422TE85LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 1mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 65 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092497-RN2422TE85LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: S-Mini
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 1mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 65 @ 100mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2422TE85LF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN2422TE85LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN2422TE85LF
TRANS PREBIAS PNP 50V 0.8A SMINI

TRANS PREBIAS PNP 50V 0.8A SMINI

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
RN2422TE85LF
Bipolar Transistors - Pre-Biased RN2422TE85LF
Bipolar Transistors - Pre-Biased PNP 50V 0.8A TRANSISTOR LOG

Bipolar Transistors - Pre-Biased PNP 50V 0.8A TRANSISTOR LOG

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 292-RN2422TE85LF 264-RN2422TE85LFDKR-ND 1092497-RN2422TE85LF RN2422TE85LF RN2422TE85LF
Product Name 50V 0.8A Bipolar Transistor Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2422TE85LF Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased
Package Type Tape & Reel (TR) SOT23; TO-236-3, SC-59, SOT-23-3 SOT3; S-Mini
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