Toshiba America Electronic Components, Inc. 50V 0.2W Bipolar Transistor RN2409

Description
TRANS PREBIAS PNP 50V 0.2W SMINI Product overview: RN2409 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2409 can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 50V 0.2W SMINI Product overview: RN2409 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2409 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
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Singapore
50V 0.2W Bipolar Transistor
293-RN2409
50V 0.2W Bipolar Transistor 293-RN2409
TRANS PREBIAS PNP 50V 0.2W SMINI Product overview: RN2409 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2409 can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 50V 0.2W SMINI Product overview: RN2409 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2409 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2409 - 183788-RN2409 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2409
183788-RN2409
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2409 183788-RN2409
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183788-RN2409 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 70 @ 10mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 183788-RN2409
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: S-Mini
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 70 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-RN2409 183788-RN2409
Product Name 50V 0.2W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2409
Polarity PNP PNP; PNP - Pre-Biased
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