Toshiba Corporation Bipolar Transistors - Pre-Biased RN2406T5LFT

RN2406T5LFT is a PNP silicon epitaxial transistor with built-in bias resistors, designed for switching, inverter, interface, and driver circuits. It is packaged in a JEDEC TO-236MOD (JEITA SC-59) case, weighing 12 mg. The device has a collector-base voltage rating of -50 V, a collector-emitter voltage of -5 V, and a maximum collector current of -100 mA. The collector power dissipation is 200 mW, with a maximum junction temperature of 150 °C. The internal resistor values are R1 = 4.7 kΩ and R2 = 47 kΩ. The DC current gain ranges from 80 to infinity, and the saturation voltage is -0.3 V max at -5 mA collector current and -0.25 mA base current. The transition frequency is 200 MHz, and the output capacitance is 3 to 6 pF.