Toshiba Corporation Bipolar Transistors - Pre-Biased RN2405T5LFT

The RN2405 is a silicon PNP epitaxial transistor with built-in bias resistors, designed for switching, inverter, interface, and driver circuits. It shares a JEDEC TO-236MOD / JEITA SC-59 package with a weight of 12 mg. The device has a collector-emitter voltage rating of −5 V, a collector current of −100 mA, and a collector power dissipation of 200 mW. The built-in resistors are R1 = 2.2 kΩ and R2 = 47 kΩ. The DC current gain (hFE) ranges from 80 min, and the saturation voltage is −0.3 V max. The junction temperature is rated to 150 °C, and the storage temperature range is −55 to 150 °C. The device meets RoHS compliance. The RN2405T5LFT is part of this series, with the trailing code indicating packaging or finish.