Toshiba Electronics (UK) Ltd Single, Pre-Biased Bipolar Transistors RN2308(TE85L,F)

Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SC-70
  • Single, Pre-Biased Bipolar Transistors - RN2308(TE85LF)CT-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2308(TE85L,F) - 100074-RN2308(TE85L,F) - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2308(TE85L,F) - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SC-70
Request a Quote Datasheet

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Single, Pre-Biased Bipolar Transistors - RN2308(TE85LF)CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
RN2308(TE85LF)CT-ND
Single, Pre-Biased Bipolar Transistors RN2308(TE85LF)CT-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SC-70

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SC-70

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2308(TE85L,F) - 100074-RN2308(TE85L,F) - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2308(TE85L,F)
100074-RN2308(TE85L,F)
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2308(TE85L,F) 100074-RN2308(TE85L,F)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 100074-RN2308(TE85L, F) Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: USM Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 100074-RN2308(TE85L,F)
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: USM
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2308(TE85L,F) - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN2308(TE85L,F)
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN2308(TE85L,F)
TRANS PREBIAS PNP 50V 0.1A SC70

TRANS PREBIAS PNP 50V 0.1A SC70

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number RN2308(TE85LF)CT-ND 100074-RN2308(TE85L,F) RN2308(TE85L,F)
Product Name Single, Pre-Biased Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2308(TE85L,F) Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Pre-Biased
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