Toshiba Electronics (UK) Ltd Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors RN2302,LF

Description
Win Source Part Number: 1376983-RN2302,LF Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Package: Tape & Reel Fake Threat In the Open Market: 43 pct. MSL Level: 1 (Unlimited) Mfr: Toshiba Semiconductor and Storage Product Status: Active Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Base Product Number: RN2302 Mounting Type: Surface Mount HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW
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Description
Win Source Part Number: 1376983-RN2302,LF Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Package: Tape & Reel Fake Threat In the Open Market: 43 pct. MSL Level: 1 (Unlimited) Mfr: Toshiba Semiconductor and Storage Product Status: Active Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Base Product Number: RN2302 Mounting Type: Surface Mount HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW
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Datasheet
Datasheet Summary
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The RN2302,LF is a PNP pre-biased bipolar transistor designed for various applications including switching, inverter circuits, interfacing, and driver circuits. It features an integrated bias resistor, which simplifies circuit design by reducing the number of external components required, thereby minimizing system size and assembly time. This transistor is AEC-Q101 qualified, making it suitable for automotive applications. The RN2302,LF has a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. It includes a base resistor value of 10 kOhms and an emitter-base resistor value of 10 kOhms. The device exhibits a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, with a maximum Vce saturation of 300 mV at specified conditions. The current collector cutoff is rated at a maximum of 500 nA, and it operates with a transition frequency of 200 MHz. The maximum power dissipation is 100 mW. This transistor is packaged in a SC-70 form factor, suitable for surface mount applications, and is available in tape and reel packaging.

Datasheet Summary
Powered by GS/AI

The RN2302,LF is a PNP pre-biased bipolar transistor designed for various applications including switching, inverter circuits, interfacing, and driver circuits. It features an integrated bias resistor, which simplifies circuit design by reducing the number of external components required, thereby minimizing system size and assembly time. This transistor is AEC-Q101 qualified, making it suitable for automotive applications. The RN2302,LF has a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. It includes a base resistor value of 10 kOhms and an emitter-base resistor value of 10 kOhms. The device exhibits a minimum DC current gain (hFE) of 50 at 10 mA and 5 V, with a maximum Vce saturation of 300 mV at specified conditions. The current collector cutoff is rated at a maximum of 500 nA, and it operates with a transition frequency of 200 MHz. The maximum power dissipation is 100 mW. This transistor is packaged in a SC-70 form factor, suitable for surface mount applications, and is available in tape and reel packaging.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors - 1376983-RN2302,LF - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
1376983-RN2302,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors 1376983-RN2302,LF
Win Source Part Number: 1376983-RN2302,LF Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Package: Tape & Reel Fake Threat In the Open Market: 43 pct. MSL Level: 1 (Unlimited) Mfr: Toshiba Semiconductor and Storage Product Status: Active Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Base Product Number: RN2302 Mounting Type: Surface Mount HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200 MHz Power - Max: 100 mW

Win Source Part Number: 1376983-RN2302,LF
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Package: Tape & Reel
Fake Threat In the Open Market: 43 pct.
MSL Level: 1 (Unlimited)
Mfr: Toshiba Semiconductor and Storage
Product Status: Active
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70
Base Product Number: RN2302
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
ECCN: EAR99
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200 MHz
Power - Max: 100 mW

Buy Now Datasheet
Singapore, Singapore
50V 0.1A Bipolar Transistor
292-RN2302,LF
50V 0.1A Bipolar Transistor 292-RN2302,LF
TRANS PREBIAS PNP 50V 0.1A SC70 Product overview: RN2302,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2302,LF can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 50V 0.1A SC70 Product overview: RN2302,LF from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2302,LF can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2302,LFTR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2302,LFTR-ND
Single, Pre-Biased Bipolar Transistors 264-RN2302,LFTR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SC-70

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 200MHz 100mW Surface Mount SC-70

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2302,LFDKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2302,LFDKR-ND
Single, Pre-Biased Bipolar Transistors 264-RN2302,LFDKR-ND
TRANS PREBIAS PNP 50V 0.1A SC70

TRANS PREBIAS PNP 50V 0.1A SC70

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2302,LFCT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2302,LFCT-ND
Single, Pre-Biased Bipolar Transistors 264-RN2302,LFCT-ND
TRANS PREBIAS PNP 50V 0.1A SC70

TRANS PREBIAS PNP 50V 0.1A SC70

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2302,LF - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN2302,LF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN2302,LF
TRANS PREBIAS PNP 50V 0.1A SC70

TRANS PREBIAS PNP 50V 0.1A SC70

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1376983-RN2302,LF 292-RN2302,LF 264-RN2302,LFTR-ND RN2302,LF
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors 50V 0.1A Bipolar Transistor Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type SOT3 Tape & Reel (TR) SOT323; SC-70, SOT-323
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 100000 milliamps 100 milliamps
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