Toshiba Corporation Bipolar Transistors - Pre-Biased RN2115MFV(TPL3)

RN2115MFV is a PNP silicon epitaxial transistor with integrated bias resistors, designed for switching and driver applications in compact electronics. It features an ultra-small VESM package and weighs 1.5 mg. The device has a collector-emitter voltage rating of -50 V, collector current of -100 mA, and power dissipation of 150 mW. Internal bias resistors are R1 = 2.2 kΩ and R2 = 10 kΩ. Junction and storage temperature ranges are -55 °C to 150 °C. Its electrical characteristics include a DC current gain (hFE) of 50 minimum at VCE = -5 V and IC = -10 mA, collector-emitter saturation voltage of -0.1 to -0.3 V, and input resistor ratio R1/R2 of 0.22. The device is complementary to RN1115MFV.