Toshiba Corporation Bipolar Transistors - Pre-Biased RN2112MFV(TPL3)

RN2112MFV and RN2113MFV are silicon PNP epitaxial transistors with built-in bias resistors, designed for switching, inverter, interface, and driver circuits. They are housed in an ultra-small VESM package weighing 1.5 mg, suited for high-density mounting. The RN2112MFV variant features an input resistor of 15.4 to 28.6 kΩ. Maximum ratings include a collector-base voltage of -50 V, collector-emitter voltage of -50 V, collector current of -100 mA, and power dissipation of 150 mW. Junction temperature ranges up to 150 °C. Electrical characteristics include a DC current gain of 120 to 400 at -1 mA collector current and collector-emitter saturation voltage of -0.1 to -0.3 V. The devices comply with RoHS requirements.