Toshiba America Electronic Components, Inc. 50V 0.1W Bipolar Transistor RN2112

Description
TRANS PREBIAS PNP 50V 0.1W SSM Product overview: RN2112 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2112 can be used for catalog matching and distributor lookup.
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Description
TRANS PREBIAS PNP 50V 0.1W SSM Product overview: RN2112 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2112 can be used for catalog matching and distributor lookup.
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Suppliers

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Product
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Singapore
50V 0.1W Bipolar Transistor
293-RN2112
50V 0.1W Bipolar Transistor 293-RN2112
TRANS PREBIAS PNP 50V 0.1W SSM Product overview: RN2112 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2112 can be used for catalog matching and distributor lookup.

TRANS PREBIAS PNP 50V 0.1W SSM Product overview: RN2112 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN2112 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2112 - 183737-RN2112 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2112
183737-RN2112
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2112 183737-RN2112
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183737-RN2112 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSM Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 1mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 183737-RN2112
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SSM
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Transistors
Product Number 293-RN2112 183737-RN2112
Product Name 50V 0.1W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2112
Polarity PNP PNP; PNP - Pre-Biased
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