Win Source Part Number: 978197-RN2111MFV,L3F
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel (TR)
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Package / Case: SOT-723
Supplier Device Package: VESM
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN2111MFVL3F
Base Product Number: RN2111
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 150mW Surface Mount VESM
TRANS PREBIAS PNP 50V 0.1A VESM
TRANS PREBIAS PNP 50V 0.1A VESM
TRANS PREBIAS PNP 50V 0.1A VESM
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 978197-RN2111MFV,L3F | 264-RN2111MFV,L3FTR-ND | RN2111MFV,L3F |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP | |
| Package Type | SOT3 | SOT-723 | |
| IC(max) | 100 milliamps | 100 milliamps | |
| Power Gain | 120 dB |
