Toshiba Electronics (UK) Ltd 50V 0.1A Bipolar Transistor RN2107MFV,L3F

TRANS PREBIAS PNP 50V 0.1A VESM Product overview: RN2107MFV,L3F from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2107MFV,L3F can be used for catalog matching and distributor lookup.

Win Source Part Number: 1088725-RN2107MFV,L3F
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Series: *
Package: Bulk
Standard Package: 8,000
Mounting: SMD (SMT)
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Package / Case: SOT-723
Supplier Device Package: VESM
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN2107MFV,L3F(B,RN2107MFV,L3F(T,RN2107MFVL3F
Base Product Number: RN2107