Toshiba Electronics (UK) Ltd Single, Pre-Biased Bipolar Transistors RN2105MFV,L3F(CT

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TRANS PREBIAS PNP 50V 0.1A VESM
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Description
TRANS PREBIAS PNP 50V 0.1A VESM
Request a Quote Datasheet

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Product
Description
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Single, Pre-Biased Bipolar Transistors - RN2105MFV,L3F(CT - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
RN2105MFV,L3F(CT
Single, Pre-Biased Bipolar Transistors RN2105MFV,L3F(CT
TRANS PREBIAS PNP 50V 0.1A VESM

TRANS PREBIAS PNP 50V 0.1A VESM

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors - 1376940-RN2105MFV,L3F(CT - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
1376940-RN2105MFV,L3F(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors 1376940-RN2105MFV,L3F(CT
Win Source Part Number: 1376940-RN2105MFV,L3 F(CT Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Fake Threat In the Open Market: 44 pct. MSL Level: 1 (Unlimited) Mfr: Toshiba Semiconductor and Storage Package: Tape & Reel Product Status: Active Package / Case: SOT-723 Supplier Device Package: VESM Base Product Number: RN2105 Mounting Type: Surface Mount HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 150 mW

Win Source Part Number: 1376940-RN2105MFV,L3F(CT
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Fake Threat In the Open Market: 44 pct.
MSL Level: 1 (Unlimited)
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-723
Supplier Device Package: VESM
Base Product Number: RN2105
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
ECCN: EAR99
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2105MFVL3F(DKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2105MFVL3F(DKR-ND
Single, Pre-Biased Bipolar Transistors 264-RN2105MFVL3F(DKR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2105MFVL3F(CT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2105MFVL3F(CT-ND
Single, Pre-Biased Bipolar Transistors 264-RN2105MFVL3F(CT-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 264-RN2105MFVL3F(TR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
264-RN2105MFVL3F(TR-ND
Single, Pre-Biased Bipolar Transistors 264-RN2105MFVL3F(TR-ND
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM

Buy Now Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> Digital Transistors
RN2105MFV,L3F(CT
Triode/MOS Tube/Transistor >> Digital Transistors RN2105MFV,L3F(CT
80@10mA,5V One PNP - Pre-Biased 150mW 100mA 50V 500nA SOT-723 Digital Transistors ROHS

80@10mA,5V One PNP - Pre-Biased 150mW 100mA 50V 500nA SOT-723 Digital Transistors ROHS

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN2105MFV,L3F(CT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN2105MFV,L3F(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN2105MFV,L3F(CT
TRANS PREBIAS PNP 50V 0.1A VESM

TRANS PREBIAS PNP 50V 0.1A VESM

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey LCSC Electronics Technology (HK) Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Transistors Bipolar RF Transistors
Product Number RN2105MFV,L3F(CT 1376940-RN2105MFV,L3F(CT 264-RN2105MFVL3F(DKR-ND RN2105MFV,L3F(CT RN2105MFV,L3F(CT
Product Name Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors Triode/MOS Tube/Transistor >> Digital Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP - Pre-Biased; PNP PNP PNP PNP
Package Type SOT-723 SOT3 SOT-723
IC(max) 100 milliamps 100 milliamps
VCEO 50 volts 50 volts
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