Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 100mA 250MHz 150mW Surface Mount VESM
TRANS PREBIAS PNP 50V 0.1A VESM
Win Source Part Number: 1376940-RN2105MFV,L3
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Fake Threat In the Open Market: 44 pct.
MSL Level: 1 (Unlimited)
Mfr: Toshiba Semiconductor and Storage
Package: Tape & Reel
Product Status: Active
Package / Case: SOT-723
Supplier Device Package: VESM
Base Product Number: RN2105
Mounting Type: Surface Mount
HTSUS: 8541.21.0075
ECCN: EAR99
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 150 mW
TRANS PREBIAS PNP 50V 0.1A VESM Product overview: RN2105MFV,L3F(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 0.1A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN2105MFV,L3F(CT
80@10mA,5V One PNP - Pre-Biased 150mW 100mA 50V 500nA SOT-723 Digital Transistors ROHS
TRANS PREBIAS PNP 50V 0.1A VESM
| DigiKey | ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 264-RN2105MFVL3F(DKR-ND | RN2105MFV,L3F(CT | 1376940-RN2105MFV,L3F(CT | 292-RN2105MFV,L3F(CT | RN2105MFV,L3F(CT | RN2105MFV,L3F(CT |
| Product Name | Single, Pre-Biased Bipolar Transistors | Single, Pre-Biased Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors | 50V 0.1A Bipolar Transistor | Triode/MOS Tube/Transistor >> Digital Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | PNP | PNP - Pre-Biased; PNP | PNP | PNP | ||
| Package Type | SOT-723 | SOT-723 | SOT3 | Tape & Reel (TR) | ||
| IC(max) | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts |
