Toshiba Corporation Bipolar Transistors - Pre-Biased RN2104MFV(TPL3)

The RN2104MFV is a silicon PNP epitaxial transistor with built-in bias resistors, designed for switching, inverter, interface, and driver circuits. It uses the VESM package with dimensions of 1.2 mm × 0.80 mm × 0.50 mm and weighs 1.5 mg. The device has a collector-emitter voltage rating of −50 V, a collector current rating of −100 mA, and a power dissipation of 150 mW. The input resistor R1 is 47 kΩ and R2 is 47 kΩ. It operates with a junction temperature up to 150 °C and storage temperature from −55 °C to 150 °C. The DC current gain hFE is a minimum of 80 at VCE = −5 V and IC = −10 mA, and the collector-emitter saturation voltage is −0.3 V maximum at IC = −5 mA and IB = −0.5 mA. Transition frequency is 250 MHz at VCE = −10 V and IC = −5 mA.