Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2102,LF RN2102,LF

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096781-RN2102,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSM Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096781-RN2102,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSM Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2102,LF - 096781-RN2102,LF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2102,LF
096781-RN2102,LF
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2102,LF 096781-RN2102,LF
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 096781-RN2102,LF Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 200MHz Transistor Polarity: PNP - Pre-Biased Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SSM Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 100mW Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 096781-RN2102,LF
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Pre-Biased
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SSM
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 50 @ 10mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 096781-RN2102,LF
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN2102,LF
Polarity PNP; PNP - Pre-Biased
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