TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Product overview: RN1966FE from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1966FE can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1243393-RN1966FE
Manufacturer Homepage: www.semicon.toshiba.
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Sufficient
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors |
| Product Number | 293-RN1966FE | 1243393-RN1966FE |
| Product Name | Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1966FE |
| Package Type | SOT3 |
