Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1963FE RN1963FE

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1243389-RN1963FE Manufacturer Homepage: www.semicon.toshiba. co.jp/eng Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1243389-RN1963FE Manufacturer Homepage: www.semicon.toshiba. co.jp/eng Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote

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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1963FE - 1243389-RN1963FE - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1963FE
1243389-RN1963FE
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1963FE 1243389-RN1963FE
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1243389-RN1963FE Manufacturer Homepage: www.semicon.toshiba. co.jp/eng Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1243389-RN1963FE
Manufacturer Homepage: www.semicon.toshiba.co.jp/eng
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now
Singapore
Bipolar Transistor
293-RN1963FE
Bipolar Transistor 293-RN1963FE
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Product overview: RN1963FE from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1963FE can be used for catalog matching and distributor lookup.

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) Product overview: RN1963FE from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1963FE can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category RF Transistors Bipolar RF Transistors
Product Number 1243389-RN1963FE 293-RN1963FE
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1963FE Bipolar Transistor
Package Type SOT3
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