Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092482-RN1910FE,LF(
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: ES6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 1mA, 5V
Maximum Power Dissipation: 100mW
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
TRANS 2NPN PREBIAS 0.1W ES6
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 1092482-RN1910FE,LF(CT | RN1910FELF(CTDKR-ND | RN1910FE,LF(CT |
| Product Name | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1910FE,LF(CT | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN; 2 NPN - Pre-Biased (Dual) | NPN |
