Win Source Part Number: 1383334-RN1907FE,LF(
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Power - Max: 100mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Base Product Number: RN1907
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Standard Package: 4,000 pcs
TRANS 2NPN PREBIAS 0.1W ES6 Product overview: RN1907FE,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.1W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.1W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1907FE,LF(CT can be used for catalog matching and distributor lookup.
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
TRANS 2NPN PREBIAS 0.1W ES6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 1383334-RN1907FE,LF(CT | 293-RN1907FE,LF(CT | RN1907FELF(CTTR-ND | RN1907FE,LF(CT |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar Transistor Arrays, Pre-Biased | 0.1W Bipolar Transistor | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN | |
| Package Type | SOT3 | Tape & Reel (TR) | SOT-563, SOT-666 | |
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | |
| Power Gain | 80 dB | |||
| Operating Frequency | 250 MHz |
