Win Source Part Number: 1314603-RN1905FE,LF(
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Mounting: SMD (SMT)
Power - Max: 100mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 250MHz
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 47kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Base Product Number: RN1905
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
TRANS 2NPN PREBIAS 0.1W ES6
| Win Source Electronics | DigiKey | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 1314603-RN1905FE,LF(CT | RN1905FELF(CTDKR-ND | RN1905FE,LF(CT |
| Product Name | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN |
