Toshiba Electronics (UK) Ltd Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased RN1902T5LFT

Win Source Part Number: 973326-RN1902T5LFT
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 250MHz
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
HTSUS: 8541.21.0095
Mfr: Toshiba Semiconductor and Storage
Other Names: RN1902T5LFTCT,RN1902T5LFTTR,RN1902(T5L,F,T),RN1902T5LFTDKR
Base Product Number: RN1902

TRANS 2NPN PREBIAS 0.2W US6 Product overview: RN1902T5LFT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1902T5LFT can be used for catalog matching and distributor lookup.