Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1902,LF(CT RN1902,LF(CT

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092473-RN1902,LF(CT Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092473-RN1902,LF(CT Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1902,LF(CT - 1092473-RN1902,LF(CT - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1902,LF(CT
1092473-RN1902,LF(CT
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1902,LF(CT 1092473-RN1902,LF(CT
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1092473-RN1902,LF(CT Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: US6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 50 @ 10mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1092473-RN1902,LF(CT
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: US6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 50 @ 10mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN1902LF(CTDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN1902LF(CTDKR-ND
Bipolar Transistor Arrays, Pre-Biased RN1902LF(CTDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN1902LF(CTCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN1902LF(CTCT-ND
Bipolar Transistor Arrays, Pre-Biased RN1902LF(CTCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - RN1902LF(CTTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
RN1902LF(CTTR-ND
Bipolar Transistor Arrays, Pre-Biased RN1902LF(CTTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount US6

Buy Now Datasheet
Singapore
0.2W Bipolar Transistor
293-RN1902,LF(CT
0.2W Bipolar Transistor 293-RN1902,LF(CT
TRANS 2NPN PREBIAS 0.2W US6 Product overview: RN1902,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1902,LF(CT can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.2W US6 Product overview: RN1902,LF(CT from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.2W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.2W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-RN1902,LF(CT can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RN1902,LF(CT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
RN1902,LF(CT
Discrete Semiconductor Products - Transistors - Bipolar (BJT) RN1902,LF(CT
TRANS 2NPN PREBIAS 0.2W US6

TRANS 2NPN PREBIAS 0.2W US6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 1092473-RN1902,LF(CT RN1902LF(CTDKR-ND 293-RN1902,LF(CT RN1902,LF(CT
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1902,LF(CT Bipolar Transistor Arrays, Pre-Biased 0.2W Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN; 2 NPN - Pre-Biased (Dual) NPN NPN
Package Type SOT3; US6 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR)
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps
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