Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount USV
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount USV
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount USV
Win Source Part Number: 1126974-RN1709,LF
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: 2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Frequency - Transition: 250MHz
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 22kOhms
HTSUS: 8541.21.0075
Mfr: Toshiba Semiconductor and Storage
Other Names: RN1709LFCT,RN1709LFT
Base Product Number: RN1709
RoHS Status: RoHS non-compliant
NPNX2 BRT Q1BSR47KOHM Q1BER22KOH
| DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | |
|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | RN1709LFTR-ND | 1126974-RN1709,LF | RN1709,LF |
| Product Name | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | |
| Package Type | 5-TSSOP, SC-70-5, SOT-353 | SOT3 | USV |
| IC(max) | 100 milliamps | 100 milliamps | |
| Power Gain | 70 dB |
