Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1605 RN1605

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183658-RN1605 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SM6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183658-RN1605 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SM6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1605 - 183658-RN1605 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1605
183658-RN1605
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1605 183658-RN1605
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183658-RN1605 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Status: Active Case / Package: SM6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 80 @ 10mA, 5V Maximum Power Dissipation: 300mW Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 183658-RN1605
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SM6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 80 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 183658-RN1605
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1605
Polarity NPN; 2 NPN - Pre-Biased (Dual)
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