Toshiba Imaging Systems Division TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - RN1501(TE85L,F) RN1501(TE85L,F)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 101681-RN1501(TE85L,F)
Packaging: Cut Reel
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Case / Package: SMV
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 30 @ 10mA, 5V
Maximum Power Dissipation: 300mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance

Trans Digital BJT NPN 50V 100mA 300mW 5-Pin SMV T/R Product overview: RN1501(TE85L,F) from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 100mA, 300mW. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 100mA, 300mW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-RN1501(TE85L,F) can be used for catalog matching and distributor lookup.