Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1421 RN1421

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183641-RN1421 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 2mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Signal Processing, Portable Devices, Consumer Electronics
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183641-RN1421 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 2mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Signal Processing, Portable Devices, Consumer Electronics
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TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1421 - 183641-RN1421 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1421
183641-RN1421
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1421 183641-RN1421
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 183641-RN1421 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 300MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 1k Resistor - Emitter Base (R2) (Ohms): 1k Categories: Discrete Semiconductor Products Status: Active Case / Package: S-Mini Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 250mV @ 2mA, 50mA Collector Cut-off Current(Max): 500nA Typical Gain (hFE) (Min): 60 @ 100mA, 1V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Balance Application Field: Used in Signal Processing, Portable Devices, Consumer Electronics

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 183641-RN1421
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 300MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 1k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: S-Mini
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 250mV @ 2mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 60 @ 100mA, 1V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Application Field: Used in Signal Processing, Portable Devices, Consumer Electronics

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 183641-RN1421
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - RN1421
Polarity NPN; NPN - Pre-Biased
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